vb40100c-m3, VB40100CHM3 www.vishay.com vishay general semiconductor revision: 03-jan-17 1 document number: 87987 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual high-voltage trench mos barrier schottky rectifier ultra low v f = 0.38 v at i f = 5 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? low thermal resistance ? meets msl level 1, per j-st d-020, lf maximum peak of 245 c ? aec-q101 qualified available: ? - automotive ordering code p/nhm3 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency converters, switching power supplies, freewheeling diod es, or-ing diode, dc/dc converters, and reverse battery protection. mechanical data case: to-263ab ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade ? base p/nhm3 - halogen-free, rohs-compliant, and aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 and hm3 suffix meets jesd 201 class 2 whisker test polarity: as marked primary characteristics package to-263ab i f(av) 2 x 20 a v rrm 100 v i fsm 250 a v f at i f = 20 a 0.61 v t j max. 150 c diode variations common cathode to-263ab 1 2 k tmbs ? pin 1 pin 2 k heatsink vb40100c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vb40100c unit maximum repetitive peak reverse voltage v rrm 100 v maximum average forward rectified current ? (fig. 1) per device i f(av) 40 a per diode 20 peak forward surge current 8.3 ms si ngle half sine-w ave superimposed on rated load per diode i fsm 250 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg -40 to +150 c
vb40100c-m3, VB40100CHM3 www.vishay.com vishay general semiconductor revision: 03-jan-17 2 document number: 87987 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms note (1) aec-q101 qualified electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage ? per diode i f = 5 a t a = 25 c v f 0.47 - v i f = 10 a 0.54 - i f = 20 a 0.67 0.73 i f = 5 a t a = 125 c 0.38 - i f = 10 a 0.45 - i f = 20 a 0.61 0.67 reverse current at rated v r ? per diode (2) v r = 70 v t a = 25 c i r 9-a t a = 125 c 10 - ma v r = 100 v t a = 25 c - 1000 a t a = 125 c 21 45 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vb40100c unit typical thermal resistance per diode r ? jc 2.0 c/w ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-263ab vb40100c-m3/4w 1.39 4w 50/tube tube to-263ab vb40100c-m3/8w 1.39 8w 800/reel tape and reel to-263ab VB40100CHM3/i (1) 1.39 i 800/reel tape and reel
vb40100c-m3, VB40100CHM3 www.vishay.com vishay general semiconductor revision: 03-jan-17 3 document number: 87987 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - forward power loss characteristics per diode fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical junction capacitance per diode fig. 6 - typical transient thermal impedance per diode case temperature (c) average forward current (a) 50 40 30 20 10 0 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 average forward current (a) average power loss (w) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 d = t p /t t p t instantaneous forward voltage (v) 0 0.2 0.4 0.6 0.8 1 100 10 1 0.1 t a = 25 c t a = 125 c t a = 150 c t a = 100 c instantaneous forward current (a) 10 20 30 40 50 60 70 80 90 100 1 0.1 0.01 0.001 100 10 percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t a = 150 c t a = 25 c t a = 100 c t a = 125 c 110 100 0.1 reverse voltage (v) junction capacitance (pf) 10 000 1000 100 10 1 0.1 0.01 0.1 1 10 100 t - pulse duration (s) transient thermal impedance (c/w) junction to case
vb40100c-m3, VB40100CHM3 www.vishay.com vishay general semiconductor revision: 03-jan-17 4 document number: 87987 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) to-263ab mounting pad layout 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.08 (2.032) mi n . 0.15 (3.81) mi n . 0.33 (8.38) mi n . 0.42 (10.66) mi n . 12 k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4.83) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 (8.13) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) mi n .
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